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ACE2301
Technology
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
P-Channel Enhancement Mode MOSFET
Features
* * * * *
VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100m RDS(ON),Vgs@-2.5V,Ids@-2.0A=150m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation TA=25 TA=70 Symbol VDS VGS ID IDM PD TJ TSTG RJA Max Unit -20 V 12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/W
Operating Junction Temperature Storage Temperature Range Junction to Ambient Thermal Resistance (PCB mounted)2)
2 2.1-in 2oz Cu PCB board.
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 3.Guaranteed by design; not subject to production testing.
VER 1.2
1
ACE2301
Technology
Packaging Type
SOT-23-3
3
P-Channel Enhancement Mode MOSFET
Pin Symbol Description 1 G Gate 2 S Source 3 D Drain
1 2
Ordering information
Selection Guide ACE2301 XX + H Halogen - free Pb - free BM : SOT-23-3
VER 1.2
2
ACE2301
Technology
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Trans conductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Max. Diode Forward Current Diode Forward Voltage Symbol Static BVDSS RDS(ON) RDS(ON) VGS(th) IDSS IGSS Gfs Qg Qgs Qgd Td(on) Tf td(off) tf Ciss Coss Crss IS VSD IS=-1.6A,VGS=0V VGS=0V, ID=250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=VGS, ID=250uA VDS=-9.6V, VGS=0V VGS=8V, VDS=0V VDS=-5V, ID=-2.8A Dynamic3) VDS=-6V, ID=-2.8A VGS=-4.5V VDD=-6V,RL=6 ID=-1A, VGEN=-4.5V RG=6 VDS=-6V, VGS=0V F=1.0MHz 5.8 0.85 1.7 13 36 42 34 415 223 87 -1.6 -1.2 A V pF 25 60 70 60 ns 10 nC 6.5 -0.4 -20 70.0 85.0 100.0 150.0 -0.9 -1 100 V m V uA nA S Conditions Min. Typ. Max. Unit
P-Channel Enhancement Mode MOSFET
Source-Drain Diode
Note: Pulse test pulse width<=300us, duty cycle<=2%.
VER 1.2
3
ACE2301
Technology
Packing Information
SOT-23-3
P-Channel Enhancement Mode MOSFET
VER 1.2
4
ACE2301
Technology P-Channel Enhancement Mode MOSFET
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ACE Technology Co., LTD. http://www.ace-ele.com/
VER 1.2
5

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